𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Rare-earth doped GaN and InGaN quantum dots grown by plasma assisted MBE

✍ Scribed by Y. Hori; T. Andreev; X. Biquard; E. Monroy; D. Jalabert; Le Si Dang; M. Tanaka; O. Oda; B. Daudin

Book ID
104557447
Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
201 KB
Volume
2
Category
Article
ISSN
1862-6351

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

The growth and rare-earth doping of GaN
The growth and rare-earth doping of GaN quantum dots on AlxGa1-xN layer by plasma-assisted molecular beam epitaxy
✍ Hori, Y. ;Andreev, T. ;Bellet-Amalric, E. ;Oda, O. ;Le Si Dang, D. ;Daudin, B. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 141 KB

## Abstract We report on the self organized growth of GaN quantum dots deposited on Al~__x__~ Ga~1–__x__~ N layer by plasma‐assisted molecular beam epitaxy. It is found that the relaxation of Al~__x__~ Ga~1–__x__~ N layer on AlN depends on Al composition and thickness. The measurement of the variat

Properties of Homoepitaxial and Heteroep
Properties of Homoepitaxial and Heteroepitaxial GaN Layers Grown by Plasma-Assisted MBE
✍ Sánchez-García, M. A. ;Naranjo, F. B. ;Pau, J. L. ;Jiménez, A. ;Calleja, E. ;Muñ 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 302 KB 👁 2 views

This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic

Blue-green-red LEDs based on InGaN quant
Blue-green-red LEDs based on InGaN quantum dots grown by plasma-assisted molecular beam epitaxy
✍ Xu, Tao ;Nikiforov, A. Yu ;France, Ryan ;Thomidis, Christos ;Williams, Adrian ;M 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 196 KB

## Abstract Self‐assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma‐assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 10^10^ cm^–2^, respectively. The dot density was found to decrease as the growth temperature increa