✦ LIBER ✦

Comparative optical study of Eu3+ ions doping in InGaN/GaN quantum dots and GaN layer grown by molecular beam epitaxy

✍ Scribed by Thomas Andreev; Nguyen Quang Liem; Yuji Hori; Mitsuhiro Tanaka; Osamu Oda; Bruno Daudin; Daniel Le Si Dang

Publisher: Elsevier Science
Year: 2006
Tongue: English
Weight: 231 KB
Volume: 28
Category: Article
ISSN: 0925-3467
DOI: 10.1016/j.optmat.2005.09.061

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Optical and magnetic resonance studies o

Optical and magnetic resonance studies of Mg-doped GaN homoepitaxial layers grown by molecular beam epitaxy

✍ E.R. Glaser; M. Murthy; J.A. Freitas Jr; D.F. Storm; L. Zhou; D.J. Smith 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 198 KB

Comparison of the Mechanism of Optical A

Comparison of the Mechanism of Optical Amplification in InGaN/GaN Heterostructures Grown by Molecular Beam Epitaxy and MOCVD

✍ Holst, J. ;Kaschner, A. ;Gfug, U. ;Hoffmann, A. ;Thomsen, C. ;Bertram, F. ;Riema 📂 Article 📅 2000 🏛 John Wiley and Sons 🌐 English ⚖ 117 KB 👁 2 views

A comparative study of heavy boron dopin

A comparative study of heavy boron doping in silicon and Si1−x Gex layers grown by molecular beam epitaxy

✍ M.R. Sardela Jr.; W.-X. Ni; H. Radpisheh; G.V. Hansson 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 359 KB