InN/GaN SQW and DH structures grown by radio frequency plasma-assisted MBE
β Scribed by Song-Bek Che; Wataru Terashima; Takayuki Ohkubo; Masayoshi Yoshitani; Naoki Hashimoto; Kouichirou Akasaka; Yoshihiro Ishitani; Akihiko Yoshikawa
- Book ID
- 104557495
- Publisher
- John Wiley and Sons
- Year
- 2005
- Tongue
- English
- Weight
- 210 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1862-6351
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This work presents a comparative study of the growth by plasma-assisted molecular beam epitaxy (MBE) of GaN layers on four different substrates: Si(111), Al 2 O 3 (0001), GaN/Al 2 O 3 and ELOG GaN/Al 2 O 3 templates. Optimization of the growth parameters for the case of growth of GaN layers on silic
## Abstract The successful growth of AlGaN nanocolumns by plasma assisted MBE, with different Al compositions, opened the way for achieving nanoβheterostructures including GaN Quantum Discs (QDss). The luminescence emission from the QDss embedded in the AlGaN nanocolumns was tuned by changing their