✦ LIBER ✦

Effect of Low-Temperature-Grown GaN Intermediate Layer on InN Growth by Plasma-Assisted MBE

✍ Scribed by M. Higashiwaki; T. Matsui

Publisher: John Wiley and Sons
Year: 2003
Tongue: English
Weight: 707 KB
Volume: 0
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200390063

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Microstructure of N-face InN grown on Si

Microstructure of N-face InN grown on Si (111) by plasma-assisted MBE using a thin GaN-AlN buffer layer

✍ Dimitrakopulos, G. P. ;Kehagias, Th. ;Ajagunna, A. ;Kioseoglou, J. ;Kerasiotis, 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 650 KB

## Abstract The structural properties of 2 µm thick N‐face InN film, grown on Si (111) by plasma source molecular beam epitaxy after the initial deposition of 20 nm AlN and 40 nm GaN, were examined by transmission electron microscopy. The lattice mismatched GaN/AlN and InN/GaN interfaces limited th

Growth and Characterization of InN Heter

Growth and Characterization of InN Heteroepitaxial Layers Grown on Si Substrates by ECR-Assisted MBE

✍ T. Yodo; H. Ando; D. Nosei; Y. Harada 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 103 KB 👁 2 views

Effects of the Sapphire Nitridation on t

Effects of the Sapphire Nitridation on the Polarity and Structural Properties of GaN Layers Grown by Plasma-Assisted MBE

✍ Georgakilas, A. ;Mikroulis, S. ;Cimalla, V. ;Zervos, M. ;Kostopoulos, A. ;Komnin 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 112 KB 👁 2 views

Study of Low-Frequency Excess Noise Tran

Study of Low-Frequency Excess Noise Transport in Ga-Face and N-Face GaN Thin Films Grown on Intermediate-Temperature Buffer Layer by RF-MBE

✍ Fong, W.K. ;Leung, B.H. ;Xie, J.Q. ;Surya, C. 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 126 KB 👁 2 views

Effects of the low temperature buffer an

Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE

✍ Ruterana, P. ;Morales, M. ;Gourbilleau, F. ;Singh, P. ;Drago, M. ;Schmidtling, T 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 214 KB

## Abstract InN thin films grown by MOVPE with a thickness of about 100 nm are investigated. Growth was carried out in either two or three steps: deposition of a low temperature nucleation layer at 400 °C and subse‐ quent growth of a thicker InN layer at 530 °C, or use of a GaN buffer layer which w