Effects of the low temperature buffer and annealing on the properties of InN layers grown by MOVPE

✍ Scribed by Ruterana, P. ;Morales, M. ;Gourbilleau, F. ;Singh, P. ;Drago, M. ;Schmidtling, T. ;Pohl, U. W. ;Richter, W.

• Publisher: John Wiley and Sons
• Year: 2005
• Tongue: English
• Weight: 214 KB
• Volume: 202
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200461444

✦ Synopsis

Abstract

InN thin films grown by MOVPE with a thickness of about 100 nm are investigated. Growth was carried out in either two or three steps: deposition of a low temperature nucleation layer at 400 °C and subse‐ quent growth of a thicker InN layer at 530 °C, or use of a GaN buffer layer which was annealed at 1050 °C prior to deposition of the low temperature InN buffer layer. The structural evolution of the layers during a 20 min annealing step at 540 °C under nitrogen was investigated using AFM and XRD. We analyzed the orientation distribution function of the layers by XRD reciprocal space maps applying ψ and χ scans. The results show that the crystalline layer quality is improved by use of a GaN buffer, as also assessed from higher photoluminescence intensity. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)