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Raman scattering investigations of the damage caused by reactive-ion-etching of GaAs

✍ Scribed by M. Watt; C.M. Sotomayor-Torres; R. Cheung; C.D.W. Wilkinson; H.E.G. Arnost; S.P. Beaumont

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Parametric investigations and simulation

✍ K. Ketata; S. Koumetz; O. Latry; M. Ketata; R. Debrie 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 323 KB

Investigations on the damage caused by i

✍ Hans R. Deppe; Barbara Hasler; Joachim Höpfner 📂 Article 📅 1977 🏛 Elsevier Science 🌐 English ⚖ 388 KB

Investigation of SiSiGe heterostructures

✍ T. Köster; B. Hadam; J. Gondermann; B. Spangenberg; H.G. Roskos; H. Kurz; J. Bru 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 870 KB

The study of GaAs reactive ion etching i

✍ AE Dulkin; VZ Pyataev; NO Sokolova; SA Moshkalyov; AS Smirnov; KS Frolov 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 429 KB

Use of a CCl2F2/H2 plasma for the reacti

✍ A Horniaková; J Huran; Š Haščík 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 829 KB

Investigation of strain at the ZnSe/GaAs

✍ BałA, W. ;Drozdowski, M. ;Kozielski, M. 📂 Article 📅 1992 🏛 John Wiley and Sons 🌐 English ⚖ 327 KB