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Investigation of SiSiGe heterostructures patterned by reactive ion etching

✍ Scribed by T. Köster; B. Hadam; J. Gondermann; B. Spangenberg; H.G. Roskos; H. Kurz; J. Brunner; G. Abstreiter

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
870 KB
Volume
30
Category
Article
ISSN
0167-9317

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We report on the use of a carbon-rich Pt-based material, obtained by electron and ion beam assisted deposition from metal-organic precursor, as a mask for pattern transfer processes. Thin and narrow mask patterns subjected to oxygen plasma and reactive ion etching (RIE) of silicon in SF 6 were inves