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Raman scattering characterization of strained GaAsInAs layers grown by MOVPE

✍ Scribed by P.P. Lottici; G. Attolini; E. Chimenti; C. Pelosi

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
388 KB
Volume
99
Category
Article
ISSN
0038-1098

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πŸ“œ SIMILAR VOLUMES

A Raman study of the strain in InP/GaAs
A Raman study of the strain in InP/GaAs heterostructures grown by MOVPE
✍ S. Gennari; P.P. Lottici; F. RiccΓ² πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 145 KB

A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn