Characterization of InGaN Single Layers and Quantum Wells Grown by LP-MOVPE
✍ Scribed by B. Schineller; P.H. Lim; O. Schön; H. Protzmann; M. Heuken; K. Heime
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 145 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying
InGaN/GaN multiple quantum-wells (MQWs) on Ga-polarity GaN by plasma-assisted molecularbeam epitaxy were grown and characterized. In-situ reflection high-energy-electron diffraction observations and high-resolution X-ray diffraction results indicated that a flat interface and a good periodicity of t