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A TEM Study of InGaN Layers and Quantum Wells Grown by MOCVD

✍ Scribed by P. Ruterana; R. Aguinet; M.A. Poisson


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
262 KB
Volume
216
Category
Article
ISSN
0370-1972

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TEM Investigations of (GaIn)(NAs)/GaAs M
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Quantum wells of the quaternary (GaIn)(NAs) alloy are grown compressively strained on GaAs by metal-organic vapor phase epitaxy (MOVPE) at low temperatures under non-equilibrium conditions. Growth experiments of particular heteroepitaxial multilayer systems are reported and the influence of varying