A Raman investigation on InP layers grown by Metal Organic Vapour Phase Epitaxy on GaAs (001) substrates, with thicknesses exceeding the critical thickness and ranging from 23 to \(280 \mathrm{~nm}\), is reported. The InP LO phonon shows an increasing frequency blueshift with decreasing layer thickn
β¦ LIBER β¦
Raman scattering of strained GaAs layers grown by MOVPE on InP (111) A and B
β Scribed by S. Gennari; P.P. Lottici; G. Attolini; C. Pelosi
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 340 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0038-1098
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