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A comparison of the structure of CdTe and (Hg, Cd)Te layers grown by MOVPE on {111}A and {111}B CdTe substrates

โœ Scribed by J.E. Hails; G.J. Russell; P.D. Brown; A.W. Brinkman; J. Woods

Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
478 KB
Volume
86
Category
Article
ISSN
0022-0248

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Comparison of GaN Buffer Layers Grown on
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Comparison of low-temperature (LT-) GaN buffer layers grown on GaAs {111} surfaces has been performed. LT-GaN buffer layers of 0-160 nm thickness were grown simultaneously both on GaAs (111)A and (111)B surfaces by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE) at 550 C. On GaAs (111)A