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Raman scattering characterization of Ga1−xAlxAs/GaAs heterojunctions: Epilayer and interface

✍ Scribed by Parayanthal, P.

Book ID
120658557
Publisher
American Institute of Physics
Year
1982
Tongue
English
Weight
463 KB
Volume
41
Category
Article
ISSN
0003-6951

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Characterization of MBE-grown Ga1−xAlxAs
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✍ Hou, Y. T.; Feng, Z. C.; Li, M. F.; Chua, S. J. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 94 KB 👁 2 views

## Molecular beam epitaxy (MBE)-grown ternary Ga 1-x Al x As films, with Al composition x ranging from 0 to 1 in steps of 0.1, have been studied by Raman scattering at room temperature and at 80 K. The observed broadening and asymmetry of the first-order longitudinal-optical phonon spectra induced