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Raman scattering study of Al/Ga interdiffusion in ion-implanted and annealed GaAsGa1−xAlxAs superlattices

✍ Scribed by J. Sapriel; E.V.K. Rao; F. Brillouet; J. Chavignon; P. Ossart; Y. Gao; P. Krauz


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
334 KB
Volume
4
Category
Article
ISSN
0749-6036

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Raman scattering measurements have been performed in Ga 1-x Mn x As crystals prepared by Mn ions implantation, deposition, and post-annealing. The Raman spectrum measured from the implanted surface of the sample shows some weak phonon modes in addition to GaAs-like phonon modes, where the GaAs-like