Optical characterization of interface disorder in GaAs-Ga1-xAlxAs multi-quantum well structures
β Scribed by C. Weisbuch; R. Dingle; A.C. Gossard; W. Wiegmann
- Publisher
- Elsevier Science
- Year
- 1981
- Tongue
- English
- Weight
- 290 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0038-1098
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π SIMILAR VOLUMES
Binding energies of the ground state and of four excited states of a hydrogenic impurity in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga~\_~AlxAs are calculated using a variational approach. The ground-state binding energy is calculated
Well-width dependence of quantum and transport mobilities of electrons in GaAs/GaAlAs multiple quantum wells is studied for wells with widths ranging between 50 Γ and 145 Γ . Experimental results are obtained from the amplitude analysis of the Shubnikov-de Haas (SdH) oscillations and from conventiona