Energy levels of hydrogenic impurity states in GaAs-Ga1−xAlxAs quantum well structures

✍ Scribed by Ronald L. Greene; K.K. Bajaj

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 363 KB
• Volume: 45
• Category: Article
• ISSN: 0038-1098
• DOI: 10.1016/0038-1098(83)90809-8

✦ Synopsis

Binding energies of the ground state and of four excited states of a hydrogenic impurity in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga~_~AlxAs are calculated using a variational approach. The ground-state binding energy is calculated as a function of the barrier potential for a given size of the GaAs quantum well and is found to be linearly dependent on the inverse of the square root of the barrier potential except for very small potentials. The variations of the binding energies of all five states as a function of the size of the GaAs quantum well are also calculated and their behavior is discussed.

NOTE ADDED IN PROOF

After this paper was submitted for publication, a similar calculation of the binding energies of the ground state and of a few even parity excited states appeared: C.