Impurity photoluminescence in GaAs/Ga1−xAlxAs multiple quantum wells
✍ Scribed by B. Lambert; B. Deveaud; A. Regreny; G. Talalaeff
- Publisher
- Elsevier Science
- Year
- 1982
- Tongue
- English
- Weight
- 277 KB
- Volume
- 43
- Category
- Article
- ISSN
- 0038-1098
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📜 SIMILAR VOLUMES
Binding energies of the ground state and of four excited states of a hydrogenic impurity in quantum well structures consisting of a single slab of GaAs sandwiched between two semi-infinite slabs of Ga~\_~AlxAs are calculated using a variational approach. The ground-state binding energy is calculated
Experimental results on high electric field longitudinal transport in GaAs/AlAs and \(G a A s / G a_{1-x} A l_{x} A s\) multiple quantum wells (MQW) are presented and compared with the prediction of a dielectric continuum model. We draw from our experiments the following four conclusions. (i) In \(