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Radiative recombination in heavily doped n-AlxGa1_xAs-p-GaAs heterojunctions

โœ Scribed by Constantinescu, C. ;Goldenblum, A.


Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
281 KB
Volume
3
Category
Article
ISSN
0031-8965

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Accumulation layer and interface effects
โœ Alexander K. Freire; J.Ribeiro Filho; Gil A. Farias; Valder N. Freire ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 159 KB

A theoretical model is proposed to describe doped nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface ef