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Rectification in AlxGa1-xAs-GaAs N-n heterojunction devices

✍ Scribed by S.C. Lee; G.L. Pearson


Publisher
Elsevier Science
Year
1981
Tongue
English
Weight
466 KB
Volume
24
Category
Article
ISSN
0038-1101

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Accumulation layer and interface effects
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A theoretical model is proposed to describe doped nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface ef