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Mn impurity in AlxGa1−xAs/GaAs and heterojunction band lineup

✍ Scribed by Pong-Kyun Shon; Hong-Lee Park

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
174 KB
Volume
76
Category
Article
ISSN
0038-1098

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A theoretical model is proposed to describe doped nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface ef