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Electron mobility and landau level width in modulation-doped GaAs-AlxGa1−xAs heterojunctions

✍ Scribed by P. Voisin; Y. Guldner; J.P. Vieren; M. Voos; J.C. Maan; P. Delescluse; Nuyen T. Linh

Publisher
Elsevier Science
Year
1983
Weight
233 KB
Volume
117-118
Category
Article
ISSN
0378-4363

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