𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Research on dynamics in modulation-doped GaAs/AlxGa1−xAs heterostructures

✍ Scribed by Guo-Hui Li; Shi-Ping Zhou; De-Ming Xu

Publisher
John Wiley and Sons
Year
2001
Tongue
English
Weight
137 KB
Volume
31
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

We discuss the dynamics of the forced modulation‐doped Al~x~Ga~1−x~As heterostructure device governed by the coupled differential equations, which is operative in the state far from thermodynamic equilibrium. Biased with an appropriate dc field, the system exhibits two states: spontaneous current oscillation and fixed points. Under an ac driving force imposed on a dc bias, the dynamical system shows the expected characteristics of frequency locking, quasiperiodicity, and chaos, which are sensitive to the amplitude and frequency of the external applied microwave field. In particular, the basins of attraction of both an ordinary attractor and a chaotic attractor are presented. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 31: 93–95, 2001.

📜 SIMILAR VOLUMES

Doping profile effects on modulation-dop
Doping profile effects on modulation-doped single nonabrupt GaAs/AlxGa1 − xAs quantum wells
✍ H. Wang; G.A. Farias; V.N. Freire 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 310 KB

We study inhomogeneous doping effects on the confinement properties of modulationdoped single nonabrupt GaAs/Al x Ga 1-x As quantum wells. We describe the inhomogeneous doping using error function profiles, and we solve self-consistently the coupled Schrödinger (with a position dependent kinetic ene

Accumulation layer and interface effects
Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa1-xAs heterojunctions
✍ Alexander K. Freire; J.Ribeiro Filho; Gil A. Farias; Valder N. Freire 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 159 KB

A theoretical model is proposed to describe doped nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions. It is used to study interface effects on the transmission properties and energy levels of electrons in these heterostructures. It is showed that interface ef

Accumulation layer and interface effects
Accumulation layer and interface effects in doped nonabrupt GaAs/AlxGa1 − xAs single quantum wells
✍ A.K. Freire; G.A. Farias; V.N. Freire; E.C. Ferreira 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 93 KB

The electron energy levels in doped nonabrupt GaAs/Al x Ga 1-x As single quantum wells 100 Å wide are calculated. Interface widths varying from zero to four GaAs unit cells are taken into account, as well as band bendings of 0-90 meV. It is shown that interface effects on the energy levels are impor