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On the I-U characteristics of n-GaAs – p-AlXGa1−XAs (Ge doped) heterojunctions

✍ Scribed by Constantinescu, C. ;Goldenblum, A. ;Sostarich, M.

Publisher
John Wiley and Sons
Year
1970
Tongue
English
Weight
169 KB
Volume
1
Category
Article
ISSN
0031-8965

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✍ José Ribeiro Filho; Gil A. Farias; Valder N. Freire 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 302 KB

The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission