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The influence of growth patterns on the transmission properties of nonabrupt GaAs/AlxGa1−xAs heterojunctions

✍ Scribed by José Ribeiro Filho; Gil A. Farias; Valder N. Freire

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
302 KB
Volume
20
Category
Article
ISSN
0749-6036

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✦ Synopsis

The influence of growth patterns in the transmission properties of nonabrupt GaAs/ Al V Ga \V As heterojunctions is investigated. Five interfacial growth patterns, representative of interfacial alloy variations generated by different growth techniques, are used. It is shown that carrier transmission depends on the type of the aluminum molar fraction variation through the interface. A study of the role of the interface width in carrier transmission is done for each compositional growth profile.

📜 SIMILAR VOLUMES

Transmission in compositionally nonabrup
Transmission in compositionally nonabrupt GaAs/AlxGa1-xAs heterojunctions: beyond the constant interfacial effective-mass approximation
✍ J.Ribeiro Filho; G.A. Farias; V.N. Freire 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 254 KB

The transmission properties of compositionally nonabrupt \(\mathrm{GaAs} / \mathrm{Al}_{x} \mathrm{Ga}_{1-x} \mathrm{As}\) heterojunctions are calculated by taking into account the spatial dependence of the carrier effective mass through the nonabrupt interface. The description of the nonabrupt hete

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Preparation and Investigation of Epitaxial Layers of AlxGa1-xAs solid Solutions and of Heterojunctions in the AlAs-GaAs system
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