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Radiative recombination in Ge+-implanted SiO2films annealed under hydrostatic pressure

✍ Scribed by I. E. Tyschenko; L. Rebohle

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Properties of Ge nanocrystals formed by

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Optical transitions in Ge nanocrystals f

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Study of photoluminescence of SiOxNyfilm

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Investigation of BF2+ implants in silico

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