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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films

✍ Scribed by I.E. Tyschenko; A.B. Talochkin; A.G. Cherkov; K.S. Zhuravlev; R.A. Yankov

No coin nor oath required. For personal study only.

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