Properties of Ge nanocrystals formed by implantation of Ge+ions into SiO2films with subsequent annealing under hydrostatic pressure

✍ Scribed by I. E. Tyschenko; A. B. Talochkin; A. G. Cherkov; K. S. Zhuravlev; A. Misiuk; M. Voelskow; W. Skorupa

• Book ID: 110134190
• Publisher: Springer
• Year: 2003
• Tongue: English
• Weight: 94 KB
• Volume: 37
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1568469