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Study of photoluminescence of SiOxNyfilms implanted with Ge+ions and annealed under the conditions of hydrostatic pressure

✍ Scribed by I. E. Tyschenko; K. S. Zhuravlev; E. N. Vandyshev; A. Misiuk; R. A. Yankov; L. Rebohle; W. Skorupa

Book ID: 110126159
Publisher: Springer
Year: 2001
Tongue: English
Weight: 146 KB
Volume: 35
Category: Article
ISSN: 1063-7826
DOI: 10.1134/1.1349916

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