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Radiation tolerance of Si1−yCy source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

✍ Scribed by Nakashima, Toshiyuki; Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro; Gonzalez, Mireia Bargallo; Simoen, Eddy; Claeys, Cor; Yoshino, Kenji

Book ID: 122268482
Publisher: Elsevier Science
Year: 2014
Tongue: English
Weight: 498 KB
Volume: 557
Category: Article
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.10.069

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