Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrations

✍ Scribed by T. Nakashima; T. Idemoto; I. Tsunoda; K. Takakura; M. Yoneoka; H. Ohyama; K. Yoshino; M.B. Gonzalez; E. Simoen; C. Claeys

• Book ID: 113937390
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 533 KB
• Volume: 520
• Category: Article
• ISSN: 0040-6090
• DOI: 10.1016/j.tsf.2011.10.112