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Radiation-induced defect centers in 4H silicon carbide

✍ Scribed by Dalibor, Thomas; Pensl, Gerhard; Kimoto, Tsunenobu; Matsunami, Hiroyuki; Sridhara, Shankar; Devaty, Robert P.; Choyke, Wolfgang J.

Book ID: 122759550
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 593 KB
Volume: 6
Category: Article
ISSN: 0925-9635
DOI: 10.1016/S0925-9635(97)00108-8

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