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Radiation-enhanced thermal oxidation of silicon

โœ Scribed by A. B. Simakov; A. Yu. Bashin

Book ID
110214285
Publisher
Springer
Year
2007
Tongue
English
Weight
153 KB
Volume
36
Category
Article
ISSN
1063-7397

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The oxidation kinetics of Ge + -implanted Si(1 0 0) were determined over a temperature range of 900-1100 ยฐC in both dry and wet O 2 conditions. It will be shown that the implanted Ge substantially enhances the kinetics (compared to that in virgin Si) under certain conditions. Segregation of the Ge d