Modified Hecht model qualifying radiatio
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A. Charbonnier; S. Charron; A. Houdayer; C. Lebel; C. Leroy; V. Linhart; S. Posp
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Article
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2007
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Elsevier Science
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English
β 600 KB
The Hecht model describes the charge collection efficiency of semiconductor detectors using the mean free path of the charge carriers. While the fits to data are very good for non-irradiated detectors, modifications to the model are necessary to take into account the structural changes in the detect