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Radiation damage of oxygenated silicon diodes by 27 MeV protons

✍ Scribed by D. Bisello; M. Descovich; A. Kaminsky; D. Pantano; J. Wyss; A. Zanet


Book ID
113005314
Publisher
Springer-Verlag
Year
1999
Weight
447 KB
Volume
112
Category
Article
ISSN
0369-3546

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Modified Hecht model qualifying radiatio
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The Hecht model describes the charge collection efficiency of semiconductor detectors using the mean free path of the charge carriers. While the fits to data are very good for non-irradiated detectors, modifications to the model are necessary to take into account the structural changes in the detect