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Radiation hardness of Czochralski silicon, Float Zone silicon and oxygenated Float Zone silicon studied by low energy protons

✍ Scribed by J. Härkönen; E. Tuovinen; P. Luukka; E. Tuominen; K. Lassila-Perini; P. Mehtälä; S. Nummela; J. Nysten; A. Zibellini; Z. Li; E. Fretwurst; G. Lindstroem; J. Stahl; F. Hönniger; V. Eremin; A. Ivanov; E. Verbitskaya; P. Heikkilä; V. Ovchinnikov; M. Yli-Koski; P. Laitinen; A. Pirojenko; I. Riihimäki; A. Virtanen


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
167 KB
Volume
518
Category
Article
ISSN
0168-9002

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The influence of an electrical field on the formation of defects in silicon particle detectors during particle irradiation was studied. Silicon pad detectors processed on Float Zone and Magnetic Czochralski silicon were irradiated with 7-MeV protons between the fluences of 5 Â 10 12 and 1.25 Â 10 13