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Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation

✍ Scribed by H. Ohyama; H. Shitogiden; K. Takakura; K. Shigaki; S. Kuboyama; C. Kamesawa; E. Simoen; C. Claeys

Publisher
Springer US
Year
2007
Tongue
English
Weight
297 KB
Volume
19
Category
Article
ISSN
0957-4522

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πŸ“œ SIMILAR VOLUMES

Radiation damage and amorphization of si
Radiation damage and amorphization of silicon by 2 MeV nitrogen ion implantation
✍ J.K.N. Lindner; R. Zuschlag; E.H. te Kaat πŸ“‚ Article πŸ“… 1992 πŸ› Elsevier Science 🌐 English βš– 359 KB

Radiation damage and amorphization of (111) silicon after 2 MeV 14N ion implantation at temperatures from 125 to 450 K is studied in a dose range of 2 x 10 ~3 to 5 x 10 ~7 N cm -2 mainly by optical reflectivity depth profiling. Over a wide range of doses and temperatures, damage can be described by