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Damages of Ge devices by 2-MeV electrons and their recovery

✍ Scribed by H. Ohyama; K. Sakamoto; H. Sukizaki; K. Takakura; M. Tsukamoto; K. Matsuo; I. Tsunoda; I. Kato; T. Nakashima; E. Simoen; B. De Jaeger; C. Claeys

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
386 KB
Volume
88
Category
Article
ISSN
0167-9317

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## Abstract Damage and recovery induced by electron and ion beam irradiation during AES analysis of silicon nitride and oxynitrides are discussed. The results show that after prolonged electron beam irradiation, a damage peak is induced in the Si LVV spectrum. The initial incubation time decreases