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Radiation damage and the capture of Si interstitials by dopant atoms during implantation

✍ Scribed by R.J. Culbertson; S.J. Pennycook

Book ID
113277939
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
537 KB
Volume
13
Category
Article
ISSN
0168-583X

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## Abstract The medium range implantation of rare earth ions at room temperature in GaN layers leads to the formation of point defect clusters, basal and prismatic stacking faults from the lowest fluence. When a threshold fluence of about 3 Γ— 10^15^ at/cm^2^ is reached, a highly disordered β€˜nanocry