✦ LIBER ✦
Electromigration of Cu and Ti atoms and dopant junction profiles in the p+-Si implanted channel under high-density current
✍ Scribed by H.H. Lin; S.L. Cheng; L.J. Chen
- Book ID
- 104420516
- Publisher
- Elsevier Science
- Year
- 2001
- Tongue
- English
- Weight
- 177 KB
- Volume
- 4
- Category
- Article
- ISSN
- 1369-8001
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