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Differences in the damage production of proton implanted GaAs, Ge and Si investigated by temperature dependent dechanneling

✍ Scribed by T. Bachmann; W. Wesch; K. Gärtner; E. Wendler


Book ID
113282651
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
348 KB
Volume
63
Category
Article
ISSN
0168-583X

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