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Quantum chemical study of the properties of an SiO2/Si(100) interface implanted with boron ions

✍ Scribed by A. V. Tkachenko; O. Y. Ananina; A. S. Yanovsky


Book ID
111501683
Publisher
Allerton Press Inc
Year
2010
Tongue
English
Weight
251 KB
Volume
74
Category
Article
ISSN
1062-8738

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In microelectronics, during fabrication of ultrashallow p-n junctions boron is implanted in a silicon monocrystal. However, the subsequent rapid thermal annealing (RTA) causes anomalous fast diffusion (transient enhanced diffusion, TED) of the boron inwards in the crystal, hindering the formation of