Study of the layer-substrate interface innc-Si-SiO2-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltage

✍ Scribed by E. F. Venger; S. I. Kirillova; N. E. Korsunska; T. R. Stara; L. Yu. Khomenkova; A. V. Sachenko; Y. Goldstein; E. Savir; J. Jedrzejewski

• Book ID: 111444726
• Publisher: Springer
• Year: 2010
• Tongue: English
• Weight: 165 KB
• Volume: 44
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/s1063782610090150