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Use of SIMS for determining the segregation coefficient of boron at the SiSiO2interface in steam oxidation following ion implantation

✍ Scribed by An, Dao Khac ;Pavlyák, F.


Publisher
John Wiley and Sons
Year
1986
Tongue
English
Weight
191 KB
Volume
95
Category
Article
ISSN
0031-8965

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