✦ LIBER ✦

Quantitative model of the thickness dependence of breakdown in ultra-thin oxides

✍ Scribed by J.H. Stathis

Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 303 KB
Volume: 36
Category: Article
ISSN: 0167-9317
DOI: 10.1016/s0167-9317(97)00074-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Modeling the breakdown and breakdown sta

Modeling the breakdown and breakdown statistics of ultra-thin SiO2 gate oxides

✍ Jordi Suñé; Ernest Wu 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 101 KB

A complete picture of breakdown is presented and compared with a full set of experiments. First, an analytical model for the breakdown statistics is proposed. This model is shown to have essentially the same predictive power as the percolation approach. Second, a hydrogen-based quantitative picture

A new analytic model for the description

A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

✍ R. Degraeve; P.H. Roussel; G. Groeseneken; H.E. Maes 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 287 KB

Thickness dependent studies of dielectri

Thickness dependent studies of dielectric breakdown in Langmuir thin molecular films

✍ V.K. Agarwal; V.K. Srivastava 📂 Article 📅 1973 🏛 Elsevier Science 🌐 English ⚖ 440 KB

Explanation for the oxide thickness depe

Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures

✍ D.J. DiMaria 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 261 KB

Thickness-dependent power-law of dielect

Thickness-dependent power-law of dielectric breakdown in ultrathin NMOS gate oxides

✍ A. Hiraiwa; D. Ishikawa 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 447 KB

A theoretical derivation of the log-norm

A theoretical derivation of the log-normal distribution of time-dependent dielectric breakdown in thin oxides

✍ Yuh Yaw; R.S. Muller 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 561 KB