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Quantitative electron channeling measurement of ion implantation damage in aluminum

✍ Scribed by R.G. Vardiman


Book ID
113277445
Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
688 KB
Volume
16
Category
Article
ISSN
0168-583X

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Cross-section transmission electron micr
✍ T.E. Derry; E.K. Nshingabigwi; M. Levitt; J. Neethling; S.R. Naidoo πŸ“‚ Article πŸ“… 2009 πŸ› Elsevier Science 🌐 English βš– 268 KB

It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels ''graphitize" (above about 5.2 Γ‚ 10 15 ions/ cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been direc