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Cross-section transmission electron microscopy of the ion implantation damage in annealed diamond

✍ Scribed by T.E. Derry; E.K. Nshingabigwi; M. Levitt; J. Neethling; S.R. Naidoo

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
268 KB
Volume
267
Category
Article
ISSN
0168-583X

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✦ Synopsis

It has formerly been shown that low-damage levels, produced during the implantation doping of diamond as a semiconductor, anneal easily while high levels ''graphitize" (above about 5.2 Γ‚ 10 15 ions/ cm 2 ). The difference in the defect types and their profiles, in the two cases, has never been directly observed. We have succeeded in using cross-section transmission electron microscopy to do so. The experiments were difficult because the specimens must be polished to $40 lm thickness, then implanted on edge and annealed, before final ion beam thinning to electron transparency. The low-damage micrographs reveal some deeply penetrating dislocations, whose existence had been predicted in earlier work.

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