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Pseudomorphic InGaAs/AlAs quantum wells grown on GaAs channeled substrates by MBE

โœ Scribed by S. Yamakawa; M. Hisada; S. Shimomura; Y. Yuba; S. Namba; Y. Okamoto; M. Shigeta; T. Yamamoto; K. Kobayashi; N. Sano; S. Hiyamizu

Book ID
118365462
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
524 KB
Volume
267
Category
Article
ISSN
0039-6028

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๐Ÿ“œ SIMILAR VOLUMES

GaAs/AlAs super-flat interfaces in GaAs/
GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs)2 (AlAs)2 quantum wells grown on (4 1 1)A GaAs substrates by MBE
โœ K Shinohara; Y Shimizu; S Shimomura; Y Okamoto; N Sano; S Hiyamizu ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 92 KB

E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ