✦ LIBER ✦

Radiative recombination in pseudomorphic InGaAs/GaAs quantum wires grown on nonplanar substrates

✍ Scribed by M. Grundmann; V. Tuerck; J. Christen; E. Kapon; D.M. Hwang; C. Caneau; R. Bhat; D. Bimberg

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 622 KB
Volume: 37
Category: Article
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)90363-8

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Electro-optic processes in InGaAs/GaAs q

Electro-optic processes in InGaAs/GaAs quantum wires grown by MBE on patterned substrates

✍ R. Rinaldi; M. DeVittorio; R. Cingolani; U. Marti; F.K. Reinhart 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 70 KB

We have investigated the electro-optic properties of strained InGaAs/GaAs quantum wires of lateral width below 20 nm by means of electroluminescence and luminescence under electric bias. A novel room temperature electroluminescence is observed in MBE grown samples. The optical spectra reveal a stron

Optical characteristics of GaAs/AlGaAs r

Optical characteristics of GaAs/AlGaAs ridge-quantum-well-wires grown by MBE on nonplanar substrates

✍ Yi Qian; Lianghui Chen; Qiming Wang 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 255 KB

Strain relaxation in InGaAs/GaAs quantum

Strain relaxation in InGaAs/GaAs quantum wells grown on GaAs (111)A substrates

✍ Pablo O. Vaccaro; Mitsuo Takahashi; Kazuhisa Fujita; Toshihide Watanabe 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 444 KB

Carriers escape mechanisms in shallow In

Carriers escape mechanisms in shallow InGaAs/GaAs quantum wells grown on vicinal (001) GaAs substrates

✍ A. Tabata; S. Martini; A.A. Quivy; A.M. Ceschin; J.R. Leite 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 87 KB

We used photoluminescence spectroscopy in order to investigate the carriers escape mechanisms in In 0.15 Ga 0.85 As/GaAs quantum wells grown on top of nominal ( 001) and 2 • -, 4 • -and 6 • -off (001) towards (111)A GaAs substrates. We described the escape processes using two models that fit the Arr

Transport parameters in pseudomorphic an

Transport parameters in pseudomorphic and strain-relaxed InGaAs heterojunctions grown by MBE on misoriented (100) GaAs substrates

✍ J.M. Fernández; Jianhui Chen; H.H. Wieder 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 398 KB

Fabrication and characterization of stra

Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

✍ A. Passaseo; R. Rinaldi; M. De Giorgi; R. Cingolani; M. Catalano; A. Taurino 📂 Article 📅 1999 🏛 Elsevier Science 🌐 English ⚖ 263 KB

Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs Vgrooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets w