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Pseudomorphic InGaAs high electron mobility transistors

✍ Scribed by J.M. Ballingall; P.A. Martin; J. Mazurowski; P. Ho; P.C. Chao; P.M. Smith; K.H.G. Duh


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
960 KB
Volume
231
Category
Article
ISSN
0040-6090

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Raman characterization of an operating I
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## Abstract Raman scattering was used to probe electronic properties in In‐based structures. First, Raman signatures of undoped and doped InAlAs and InGaAs bulk materials and Raman spectra of InAlAsβ€”InGaAs heterostructures were recorded. Raman scattering by coupled longitudinal optic phonons and tw