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Thermal noise in high electron mobility transistors

✍ Scribed by A. van der Ziel; E.N. Wu


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
138 KB
Volume
26
Category
Article
ISSN
0038-1101

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Analytical noise model of a high-electro
✍ Vandana Guru; H. P. Vyas; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2004 πŸ› John Wiley and Sons 🌐 English βš– 154 KB

## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient