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Properties of Zn-doped P-type In0.53Ga0.47as grown by vapor phase epitaxy (VPE) on InP substrates

✍ Scribed by E. D. Towe; T. J. Zamerowski

Book ID: 112816733
Publisher: Springer US
Year: 1982
Tongue: English
Weight: 335 KB
Volume: 11
Category: Article
ISSN: 0361-5235
DOI: 10.1007/bf02658909

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